Gan Semiconductor Device Market
Insightace Analytic PVT. Ltd. Announces the Release of a Market Assessment Report on the “Global Gan Semiconductor Device Market (by Type (opto-Semiconductor, RF Semiconductors, Power Semiconductor), by Device (Discrete Semiconductor), Lighated Semonductor, Power Drives (Lidar, Industrial Drives, EV Drives), Supplies & Inverters (SMPS, Inverters, Wireless Charging, EV Charging), Radio Frequency (RF), Front-End Module (FEM), Repeater/BOOSTER/DAS, RADAR & ENTERPRISAL), BY, BY, BYAAL Automotive, Telecommunications, Aerospace & Defense, Healthcare, Energy & Power), by Voltage Range (less than 100 V, 100-500 V, More Than 500 V)), Trends, Industry Competition Analysis, Income and forecast up to 2034. ”
According to the latest study by Insightace Analytic, the global GAN Semiconductor Device market is valued at USD 22.2 billion in 2024, and it is expected that the USD will reach 40.9 billion by 2034, with a CAGR of 6.4% during a forecast period of 2025-2034.
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A semiconductor device for Gallium nitride (GAN) is an advanced electronic component that uses GAN as its core semiconductor material and offers various benefits compared to conventional alternatives based on silicone. Gan’s superior electrical properties, as higher efficiency, faster switching speeds and improved thermal performance —– have driven increased acceptance in various applications. The growing demand for energy-efficient and powerful semiconductor devices has contributed considerably to the increasing popularity of GAN technology.
Although silicon is widely used in electronic products such as smartphones, computers, cameras and televisions, the innovation potential gradually reaches its limits. Gan Semiconductor Devices, who work up to 100 times faster than their silicon counterparts,, on the other hand, offer a compelling opportunity for applications of the next generation. These devices offer benefits, including lower costs, improved performance and more energy efficiency.
The growing market for consumer electronics, fueled by the increasing demand for smartphones, laptops, game consoles and televisions, is expected to stimulate growth in the Gan Semiconductor Device sector. In addition, the use of 5G technology has intensified the need for efficient base stations and powerful transistors, which stimulates the demand for Gan Power Semiconductors in the Information and Communications Technology (ICT) industry.
List of prominent players in the market for GAN Semiconductor Device:
• Wolfspeed, Inc. (US)
• Qorvo, Inc. (Vs.)
• Macom Technology Solutions Holdings, Inc. (Vs.)
• Infineon Technologies AG (Germany)
• Sumitomo Electric Industries, Ltd. (Japan)
• Mitsubishi Electric Group (Japan)
• Nexgen Power Systems. (US.)
• Gan Systems (Canada)
• Efficient Power Conversion Corporation (USA)
• Odyssey Semiconductor Technologies, Inc. (Vs.)
• Rohm Co., Ltd. (Japan)
• Stmicro -Electronics NV (Switzerland)
• NXP Semiconductors NV (The Netherlands)
• Transform, Inc.,
• Analog devices, Inc.,
• Texas Instruments Incorporated,
• Navitas Semiconductor,
• Microchip technology recorded,
• PowDec,
• Northrop Grumman Corporation,
• Shindgen Electric Manufacturing Co., Ltd.,
• Toshiba Infrastructure Systems & Solutions Corporation,
• Renesas Electronics Corporation,
• Gallium semiconductor,
• Ganpower
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Market dynamics
Drivers:
The increasing demand for consumer electronics, including laptops, smartphones, power adapters, high-speed drawers, LED lighting, smart-home devices and GameConsoles Die is expected to significantly stimulate the growth of the market for Gallium Nitride (GAN) semiconductor device. GAN-based devices improve the power density and efficiency in these applications, resulting in faster loading times, extensive lifespan of the device and lower energy consumption. In addition to consumer applications, GAN-Halfsteiders are increasingly being used in Enterprise environments, in particular in base stations and network infrastructure, because of their ability to work at high power levels and frequency key attributes for improving wireless communication performance. This double demand from both consumer and business sectors is expected to feed the expansion of the market.
Challenges:
Despite their benefits, the high production costs due to GAN Semiconductor devices are an important barrier for widespread acceptance. These increased costs mainly arise from the complex processes needed to produce GAN substrates, which include advanced manufacturing techniques, specialized equipment and competent expertise. In addition, the limited availability of high-quality GAN substrates limits production scalability and contributes to increased prices, which hinderes broader market penetration in comparison with more adult materials such as silicon.
Regional trends:
Noord -America is expected to recommend a significant part of the market income of the GAN Semiconductor Device devices and it is expected to grow with a robustly composed annual growth rate (CAGR) during the forecast period. This growth is attributed to the presence of leading American companies such as Cree, Inc., Efficient Power Conversion Corporation, Macom, Microsemi, Northrop Grumman Corporation and Qorvo, Inc., along with increasing acceptance of GAN technologies in the United States and Canada. Strategic investments by important players, including Texas Instruments and Qorvo, further reinforce regional growth in the development and scaling of GAN production.
In the meantime, the Asia-Pacific region is also ready for considerable expansion, supported by the presence of established semiconductor manufacturers such as Toshiba, Nichia Corporation and Mitsubishi Electric. The market growth in this region is further propelled by increased GAN integration in the consumers and companies sectors, as well as proactive government initiatives aimed at promoting innovation and promoting industrial possibilities.
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Recent developments:
• In June 2023, Nexgen just declared the start of production for the world’s first 700V and 1200V vertical GAN and half -guides, who show the most increased switching frequencies. The 1200V vertical GAN E-fashion Fin-JFETs developed by Nexgen were the only wide-band gap devices that effectively showed switching frequencies of more than 1 MHz with a nominal voltage of 1.4 kV.
• In December 2021 Microchip Technology, Inc. A substantial expansion of his Gallium Nitride (GAN) Radio Frequency (RF) Power Device portfolio with the addition of new MMICs and discreet transistors that cover frequencies to 20 GigaHertz (GHZ). Due to the combination of high power efficiency (PAE) and high linearity, the devices made new performance levels possible in applications from 5G to electronic warfare, satellite communication, commercial and defense radar systems and test equipment.
Segmentation of GAN Semiconductor Device Market
Per type
• Opto-half conductor
• RF -Halfsteiders
• Power Semiconductor
Per device
• Discrete semiconductor
• Integrated semiconductor
By application
• Lightning and lasers
• Power Drives
O Lidar
o Industrial drives
O EV -Discijen
• Supplies and inverters
O SMPS
O inverters
O wireless charging
o EV charging
• Radio frequency (RF)
O front-end module (FEM)
O Repeater/Booster/Das
O Radar & Satellite
By vertical
• Consumer & Business Enterprises
• Industrial
• Automotive
• Telecommunication
• Aerospace and defense
• Healthcare
• Energy and strength
Per voltage range
• less than 100 V
• 100-500 V
• More than 500 V
Per regional
North America
• the US
• Canada
• Mexico
Europe-
• Germany
• The UK
• France
• Italy
• Spain
• Rest of Europe
Asia-Pacific-
• China
• Japan
• India
• South Korea
• Southeast -Asia
• Rest of Asia Pacific
Latin America
• Brazil
• Argentina
• Rest of Latin -America
Middle East and Africa
• GCC -Landen
• South Africa
• Rest of the Middle East and Africa
Read overview report- https://www.insightaceanalytic.com/rport/gan-emonductor-device-market/2119
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Insightace Analytic is a market research and consultancy firm that enables customers to make strategic decisions. Our qualitative and quantitative solutions for market information inform the need for market and competition instruments to expand companies. We help customers to achieve competitive advantage by identifying untreated markets, exploring new and competitive technologies, segmenting potential markets and restoring products. Our expertise is the provision of syndicated and adapted market information reports with an in -depth analysis with important market insights in a timely and cost -effective way.
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This release is published on OpenPR.
